Pressure-Induced Modulation of Tin Selenide Properties: A Review
Abstract
:1. Introduction
2. High-Pressure Techniques
2.1. DAC Technology
2.2. In Situ High-Pressure Measurement
3. Pressure-Induced SnSe Structural Transitions
3.1. Phase Transition of Bulk SnSe
3.2. Phase Transition of SnSe Nanomaterials
4. Properties of SnSe under High Pressure
4.1. Optical Properties of SnSe under High Pressure
4.1.1. Optical Constants
4.1.2. In-Plane Anisotropy
4.2. Electronic Properties of SnSe under High Pressure
4.2.1. Electronic Structure
4.2.2. Electrical Transport
4.3. Thermoelectric Properties of SnSe under High Pressure
4.3.1. Anisotropic Thermoelectric Properties
4.3.2. Do**-induced Enhancement of Thermoelectric Properties
5. Conclusions and Perspectives
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
Correction Statement
References
- Wang, W.; Li, P.; Zheng, H.; Liu, Q.; Lv, F.; Wu, J.; Wang, H.; Guo, S. Ultrathin Layered SnSe Nanoplates for Low Voltage, High-Rate, and Long-Life Alkali–Ion Batteries. Small 2017, 13, 1702228. [Google Scholar] [CrossRef] [PubMed]
- Shi, H.; Guo, C.; Qin, B.; Wang, G.; Wang, D.; Zhao, L.-D. A promising thermoelectrics In4SnSe4 with a wide bandgap and cubic structure composited by layered SnSe and In4Se3. J. Mater. 2022, 8, 982–991. [Google Scholar] [CrossRef]
- Cheng, Y.; Yang, H.; Zhang, J.; ** in Solution-Synthesized SnSe Thermoelectric Nanomaterials. Adv. Energy Mater. 2017, 7, 1602328. [Google Scholar] [CrossRef]
- Zhang, J.; Zhu, H.; Wu, X.; Cui, H.; Li, D.; Jiang, J.; Gao, C.; Wang, Q.; Cui, Q. Plasma-assisted synthesis and pressure-induced structural transition of single-crystalline SnSe nanosheets. Nanoscale 2015, 7, 10807–10816. [Google Scholar] [CrossRef]
- Michielon de Souza, S.; Ordozgoith da Frota, H.; Trichês, D.M.; Ghosh, A.; Chaudhuri, P.; Silva dos Santos Gusmao, M.; de Figueiredo Pereira, A.F.F.; Couto Siqueira, M.; Daum Machado, K.; Cardoso de Lima, J. Pressure-induced polymorphism in nanostructured SnSe. J. Appl. Crystallogr. 2016, 49, 213–221. [Google Scholar] [CrossRef]
- Ghosh, A.; Gusmão, M.; Chaudhuri, P.; de Souza, S.M.; Mota, C.; Trichês, D.; Frota, H. Electrical properties of SnSe under high-pressure. Comput. Condens. Matter 2016, 9, 77–81. [Google Scholar] [CrossRef]
- da Silva Marques, L.; de Oliveira Ferreira, J.M.; Rebelo, Q.H.F.; Ghosh, A.; Trichês, D.M.; de Souza, S.M. High-pressure study of a nanostructured SnSe1−xSx (x = 0.5) solid solution by in-situ X-ray diffraction and ab-initio calculations. J. Alloys Compd. 2019, 792, 536–542. [Google Scholar] [CrossRef]
- Yue, L.; Xu, D.; Wei, Z.; Zhao, T.; Lin, T.; Tenne, R.; Zak, A.; Li, Q.; Liu, B. Size and Shape’s Effects on the High-Pressure Behavior of WS2 Nanomaterials. Materials 2022, 15, 2838. [Google Scholar] [CrossRef] [PubMed]
- Ji, T.; Gao, Y.; Qin, T.; Yue, D.; Liu, H.; Han, Y.; Gao, C. Effect of Grain Size on Electrical Properties of Anatase TiO2 under High Pressure. J. Phys. Chem. C 2021, 125, 3314–3319. [Google Scholar] [CrossRef]
- Li, J.; Liu, B.; Dong, J.; Li, C.; Dong, Q.; Lin, T.; Liu, R.; Wang, P.; Shen, P.; Li, Q. Size and morphology effects on the high pressure behaviors of Mn3O4 nanorods. Nanoscale Adv. 2020, 2, 5841–5847. [Google Scholar] [CrossRef]
- Bai, F.; Bian, K.; Huang, X.; Wang, Z.; Fan, H. Pressure induced nanoparticle phase behavior, property, and applications. Chem. Rev. 2019, 119, 7673–7717. [Google Scholar] [CrossRef]
- Wang, Z.; Saxena, S.; Pischedda, V.; Liermann, H.; Zha, C. In situ x-ray diffraction study of the pressure-induced phase transformation in nanocrystalline CeO2. Phys. Rev. B 2001, 64, 012102. [Google Scholar] [CrossRef]
- Wang, C.-P.; Shieh, S.R.; Withers, A.C.; Liu, X.; Zhang, D.; Tkachev, S.N.; Djirar, A.-E.; **. ACS Appl. Mater. Interfaces 2021, 13, 57638–57645. [Google Scholar] [CrossRef]
- Agarwal, A.; Trivedi, P.; Lakshminarayana, D. Impact of electrical resistance and TEP in layered SnSe crystals under high pressure. Cryst. Res. Technol. 2005, 40, 789–790. [Google Scholar] [CrossRef]
- Yan, J.; Ke, F.; Liu, C.; Wang, L.; Wang, Q.; Zhang, J.; Li, G.; Han, Y.; Ma, Y.; Gao, C. Pressure-driven semiconducting-semimetallic transition in SnSe. Phys. Chem. Chem. Phys. 2016, 18, 5012–5018. [Google Scholar] [CrossRef]
- Marini, G.; Barone, P.; Sanna, A.; Tresca, C.; Benfatto, L.; Profeta, G. Superconductivity in tin selenide under pressure. Phys. Rev. Mater. 2019, 3, 114803. [Google Scholar] [CrossRef]
- Timofeev, Y.A.; Vinogradov, B.; Begoulev, V. Superconductivity of tin selenide at pressures up to 70 GPa. Phys. Solid State 1997, 39, 207. [Google Scholar] [CrossRef]
- Matsumoto, R.; Hara, H.; Tanaka, H.; Nakamura, K.; Kataoka, N.; Yamamoto, S.; Yamashita, A.; Adachi, S.; Irifune, T.; Takeya, H. Pressure-induced superconductivity in sulfur-doped SnSe single crystal using boron-doped diamond electrode-prefabricated diamond anvil cell. J. Phys. Soc. Jpn. 2018, 87, 124706. [Google Scholar] [CrossRef]
- Moshwan, R.; Yang, L.; Zou, J.; Chen, Z.G. Eco-friendly SnTe thermoelectric materials: Progress and future challenges. Adv. Funct. Mater. 2017, 27, 1703278. [Google Scholar] [CrossRef]
- Gayner, C.; Kar, K.K. Recent advances in thermoelectric materials. Prog. Mater. Sci. 2016, 83, 330–382. [Google Scholar] [CrossRef]
- Alsaleh, N.M.; Shoko, E.; Arsalan, M.; Schwingenschlögl, U. Thermoelectric materials under pressure. Phys. Status Solidi Rapid Res. Lett. 2018, 12, 1800083. [Google Scholar] [CrossRef]
- Alsaleh, N.M.; Shoko, E.; Schwingenschlögl, U. Pressure-induced conduction band convergence in the thermoelectric ternary chalcogenide CuBiS2. Phys. Chem. Chem. Phys. 2019, 21, 662–673. [Google Scholar] [CrossRef]
- Yaseen, M.; Butt, M.K.; Ashfaq, A.; Iqbal, J.; Almoneef, M.M.; Iqbal, M.; Murtaza, A.; Laref, A. Phase transition and thermoelectric properties of cubic KNbO3 under pressure: DFT approach. J. Mater. Res. Technol. 2021, 11, 2106–2113. [Google Scholar] [CrossRef]
- Gaul, A.; Peng, Q.; Singh, D.J.; Ramanath, G.; Borca-Tasciuc, T. Pressure-induced insulator-to-metal transitions for enhancing thermoelectric power factor in bismuth telluride-based alloys. Phys. Chem. Chem. Phys. 2017, 19, 12784–12793. [Google Scholar] [CrossRef] [PubMed]
- Nandihalli, N.; Gregory, D.H.; Mori, T. Energy-Saving Pathways for Thermoelectric Nanomaterial Synthesis: Hydrothermal/Solvothermal, Microwave-Assisted, Solution-Based, and Powder Processing. Adv. Sci. 2022, 9, 2106052. [Google Scholar] [CrossRef] [PubMed]
- Carrete, J.; Mingo, N.; Curtarolo, S. Low thermal conductivity and triaxial phononic anisotropy of SnSe. Appl. Phys. Lett. 2014, 105, 101907. [Google Scholar] [CrossRef]
- Ibrahim, D.; Vaney, J.-B.; Sassi, S.; Candolfi, C.; Ohorodniichuk, V.; Levinsky, P.; Semprimoschnig, C.; Dauscher, A.; Lenoir, B. Reinvestigation of the thermal properties of single-crystalline SnSe. Appl. Phys. Lett. 2017, 110, 032103. [Google Scholar] [CrossRef]
- Zhang, Y.; Hao, S.; Zhao, L.-D.; Wolverton, C.; Zeng, Z. Pressure induced thermoelectric enhancement in SnSe crystals. J. Mater. Chem. A 2016, 4, 12073–12079. [Google Scholar] [CrossRef]
- Gusmao, M.; Mota, C.; Ghosh, A.; Frota, H. Thermoelectric properties of SnSe (Pnma) under hydrostatic pressure. Comput. Mater. Sci. 2018, 152, 243–247. [Google Scholar] [CrossRef]
- Ding, G.; Gao, G.; Yao, K. High-efficient thermoelectric materials: The case of orthorhombic IV-VI compounds. Sci. Rep. 2015, 5, 9567. [Google Scholar] [CrossRef] [PubMed]
- Yu, H.; Dai, S.; Chen, Y. Enhanced power factor via the control of structural phase transition in SnSe. Sci. Rep. 2016, 6, 26193. [Google Scholar] [CrossRef] [PubMed]
- Qin, B.; Wang, D.; He, W.; Zhang, Y.; Wu, H.; Pennycook, S.J.; Zhao, L.-D. Realizing high thermoelectric performance in p-type SnSe through crystal structure modification. J. Am. Chem. Soc. 2018, 141, 1141–1149. [Google Scholar] [CrossRef]
- Serrano-Sánchez, F.; Gharsallah, M.; Nemes, N.; Mompean, F.; Martínez, J.; Alonso, J. Record Seebeck coefficient and extremely low thermal conductivity in nanostructured SnSe. Appl. Phys. Lett. 2015, 106, 083902. [Google Scholar] [CrossRef]
- Li, Y.; Shi, X.; Ren, D.; Chen, J.; Chen, L. Investigation of the anisotropic thermoelectric properties of oriented polycrystalline SnSe. Energies 2015, 8, 6275–6285. [Google Scholar] [CrossRef]
- Zhang, Q.; Chere, E.K.; Sun, J.; Cao, F.; Dahal, K.; Chen, S.; Chen, G.; Ren, Z. Studies on thermoelectric properties of n-type polycrystalline SnSe1-xSxby iodine do**. Adv. Energy Mater. 2015, 5, 1500360. [Google Scholar] [CrossRef]
- Su, N.; Qin, B.; Zhu, K.; Liu, Z.; Shahi, P.; Sun, J.; Wang, B.; Sui, Y.; Shi, Y.; Zhao, L. Pressure-induced enhancement of thermoelectric power factor in pristine and hole-doped SnSe crystals. RSC Adv. 2019, 9, 26831–26837. [Google Scholar] [CrossRef]
- Volovik, G. Topological lifshitz transitions. Low Temp. Phys. 2017, 43, 47–55. [Google Scholar] [CrossRef]
- Bellin, C.; Pawbake, A.; Paulatto, L.; Béneut, K.; Biscaras, J.; Narayana, C.; Polian, A.; Late, D.J.; Shukla, A. Functional monochalcogenides: Raman evidence linking properties, structure, and metavalent bonding. Phys. Rev. Lett. 2020, 125, 145301. [Google Scholar] [CrossRef]
- Kim, Y.; Choi, I.-H. Optical and electrical properties of GeSe and SnSe single crystals. J. Korean Phys. Soc. 2018, 72, 238–242. [Google Scholar] [CrossRef]
- Efthimiopoulos, I.; Berg, M.; Bande, A.; Puskar, L.; Ritter, E.; Xu, W.; Marcelli, A.; Ortolani, M.; Harms, M.; Müller, J. Effects of temperature and pressure on the optical and vibrational properties of thermoelectric SnSe. Phys. Chem. Chem. Phys. 2019, 21, 8663–8678. [Google Scholar] [CrossRef] [PubMed]
- Nishimura, T.; Sakai, H.; Mori, H.; Akiba, K.; Usui, H.; Ochi, M.; Kuroki, K.; Miyake, A.; Tokunaga, M.; Uwatoko, Y. Large enhancement of thermoelectric efficiency due to a pressure-induced lifshitz transition in SnSe. Phys. Rev. Lett. 2019, 122, 226601. [Google Scholar] [CrossRef] [PubMed]
Pressure Transmitting Mediums | Advantages | Limitations | Solidification Pressure (GPa) | Hydrostatic Limit (GPa) | Refs |
---|---|---|---|---|---|
Methanol/ethanol (4:1) (ME) | Cheap; easy to use | Raman peaks at 432,882 cm−1 | 10.5 | 20 | [47,48] |
Methanol/ethanol/water (16:3:1) | Cheap; easy filling | Raman peaks in the range of 0–1000 cm−1 | 14.4 | 20 | [47] |
Silicone oil | Cheap; easy to use | Raman peaks at 153,190,490, 687 cm−1 | 0.9 | 15 | [49,50] |
Argon | Low Raman background | Difficult to use | 1.9 | 10 | [47] |
Nitrogen | Low Raman background | Difficult to use | 3.0 | 13 | [51] |
Helium | Low Raman background; high hydrostatic limit | Difficult to use | 12.1 | >60 | [43] |
Shape | Phase Transition | Pressure (GPa) | Volume (Å3) | Bulk Modulus (GPa) | PTM | Ref |
---|---|---|---|---|---|---|
bulk | α-SnSe to β-SnSe | 7 | α-SnSe: 31.48 β-SnSe: 40.9 | [60] | ||
bulk | α-SnSe to β-SnSe | 10.5 | α-SnSe: 212.23(5) | α-SnSe: 31.1(2) | helium | [61] |
nanosheets | α-SnSe to β-SnSe | 6.8 | α-SnSe: 214.52 | α-SnSe: 34.4(21) β-SnSe: 80.1(11) | 4:1 ME | [70] |
Property | Pressure Value | ||||||||
---|---|---|---|---|---|---|---|---|---|
0 GPa | 5 GPa | 10 GPa | 15 GPa | 20 GPa | 25 GPa | 30 GPa | 35 GPa | 40 GPa | |
Static dielectric ε1(0) | 10.10 | 17.00 | 28.20 | 33.00 | 42.30 | 51.10 | 58.70 | 67.20 | 76.20 |
Screen plasma frequency | 8.50 eV | 8.84 eV | 10.60 eV | 10.90 eV | 11.40 eV | 11.70 eV | 12.00 eV | 12.30 eV | 12.60 eV |
Dielectric imaginary part ε2(ω) peaks | 2.32 eV | 1.82 eV | 1.78 eV | 1.75 eV | 1.64 eV | 1.54 eV | 1.49 eV | 1.41 eV | 1.35 eV |
Refractive index n(0) | 3.18 | 4.12 | 5.31 | 5.75 | 6.51 | 7.15 | 7.66 | 8.20 | 8.74 |
Absorption intense peak energy | 4.17 eV | 4.06 eV | 4.35 eV | 4.25 eV | 4.38 eV | 4.45 eV | 4.54 eV | 4.55 eV | 4.58 eV |
Absorption peak | 1.67 × 105 | 1.60 × 105 | 1.97 × 105 | 2.01 × 105 | 2.08 × 105 | 2.13 × 105 | 2.17 × 105 | 2.20 × 105 | 2.24 × 105 |
Conductivity intense peak energy | 2.75 eV | 2.54 eV | 2.08 eV | 2.00 eV | 1.97 eV | 1.90 eV | 1.88 eV | 1.78 eV | 1.75 eV |
Conductivity peak (1/fs) | 4.63 | 4.70 | 7.68 | 8.14 | 8.82 | 9.34 | 9.81 | 10.30 | 10.80 |
Reflectivity intense peak energy | 6.62 eV | 6.97 eV | 7.29 eV | 7.59 eV | 8.03 eV | 8.20 eV | 8.57 eV | 8.95 eV | 9.73 eV |
Zero frequency coefficient of reflectivity | 0.27 | 0.39 | 0.46 | 0.49 | 0.53 | 0.57 | 0.59 | 0.61 | 0.63 |
Loss function | 8.49 eV | 9.52 eV | 10.60 eV | 10.90 eV | 11.30 eV | 11.70 eV | 12.00 eV | 12.30 eV | 12.60 eV |
Disclaimer/Publisher’s Note: The statements, opinions and data contained in all publications are solely those of the individual author(s) and contributor(s) and not of MDPI and/or the editor(s). MDPI and/or the editor(s) disclaim responsibility for any injury to people or property resulting from any ideas, methods, instructions or products referred to in the content. |
© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Share and Cite
Cheng, Z.; Zhang, J.; Lin, L.; Zhan, Z.; Ma, Y.; Li, J.; Yu, S.; Cui, H. Pressure-Induced Modulation of Tin Selenide Properties: A Review. Molecules 2023, 28, 7971. https://doi.org/10.3390/molecules28247971
Cheng Z, Zhang J, Lin L, Zhan Z, Ma Y, Li J, Yu S, Cui H. Pressure-Induced Modulation of Tin Selenide Properties: A Review. Molecules. 2023; 28(24):7971. https://doi.org/10.3390/molecules28247971
Chicago/Turabian StyleCheng, Ziwei, Jian Zhang, Lin Lin, Zhiwen Zhan, Yibo Ma, Jia Li, Shenglong Yu, and Hang Cui. 2023. "Pressure-Induced Modulation of Tin Selenide Properties: A Review" Molecules 28, no. 24: 7971. https://doi.org/10.3390/molecules28247971