Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices
Abstract
:1. Introduction
2. Growth Methods and Technology
2.1. Progress in Growth Methods
2.2. In Situ Measurements of Ammonothermal Growth
3. Characterization Methods and GaN Material Properties
3.1. Structural Defects
3.2. Do**
3.3. Point Defects and Impurities
4. Device Performance Results
5. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Units | IIHP/NL3 | SixPoint | Tohoku/MCC | Soraa/Kyocera | Competition | |
---|---|---|---|---|---|---|
Method | Am-GaN-B | NEAT | SCAAT/LPAAT | SCoRA | HVPE | |
Chemistry | Basic | Basic | Acidic | Acidic | GaCl3-NH3 | |
Wafer Size | cm | 50–60 | 50–100 | 50–60 | 50 (2015) | 50–150 |
Growth Rate | mm/day | 24–60 | 30 | 170–205 | 700 | 2400 |
Temp. Range | deg. C | 400–750 | 450–600 | 550–625 | 650–800 | 900–1100 |
Press. Range | MPa | 100–600 | 100–300 | 100–200 | 100–600 | Low |
Oxygen | atoms/cm3 | 1018–2 × 1019 | 2–8 × 1018 | - | 1018 | 1017–1019 |
DD | defects/cm2 | 103–5 × 104 | 105 | 1–5 × 104 | 105 | 5 × 106–108 |
Curvature | m | >20 | 20 | 1460 | >20 | 1–5 |
Rocking Width | arcsec | <30 | 20–50 | 20–30 | <30 | 30–80 |
Boule Thickness | mm | 3–4 | 1–3 | 2–3 | >2 | 3–4 |
Crystals/run | # | 36 | 50 | - | - | 1 |
Dislocation Method | Units | Confocal Raman | Synchrotron XRT | Defect Etching | CL | PL | Bevel Etching | Borrmann XRT | HR-XRD |
---|---|---|---|---|---|---|---|---|---|
Sample Area | mm2 | 0.0025 | 2500 | 0.25 | 2500 | 2500 | 0.25 | 2500 | 4 |
Dislocation Ty**? | Yes | Yes | No | No | No | Yes | Yes | No | |
Destructive? | No | No | Yes | No | No | Yes | No | No | |
In-line Potential? | No | No | No | Maybe | Yes | No | Yes | Yes | |
Range Capability | Disl/cm2 | <106 | 102–106 | 102–5 × 106 | - | - | - | <105 | >104 |
Measurement Depth | Surface | Full Depth | Surface | Surface | Full Depth | Full Depth | Full Depth | Full Depth | |
3D Depth Contrast | mm | 2–25 | N/A | N/A | N/A | N/A | 5–400 | N/A | N/A |
Element | Typical Range (atoms/cm3) | Amilusik Range (atoms/cm3) | Change |
---|---|---|---|
H | 1 × 1019 to 6 × 1020 | 4 × 1018 to 5 × 1019 | Improvement |
C | High 1016 to Low 1017 | 8 × 1016 to 1.5 × 1018 | Similar to worse |
Si | Low 1018 | 1 × 1017 to 2 × 1018 | Similar |
Na | 1 × 1016 to 1 × 1019 | 1 × 1016 to 7 × 1017 | Similar to better |
Mg | High 1016 to Low 1017 | 5 × 1015 to 8 × 1017 (dopant) | Similar |
Mn | 3 × 1016 to 2 × 1018 | 6 × 1015 to 1 × 1018 (dopant) | Similar |
Fe | ~1016 to Low 1017 | 3 × 1015 to 2 × 1016 | Improvement |
Zn | Not reported | 8 × 1016 to 2.5 × 1018 | N/A |
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Stoddard, N.; Pimputkar, S. Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices. Crystals 2023, 13, 1004. https://doi.org/10.3390/cryst13071004
Stoddard N, Pimputkar S. Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices. Crystals. 2023; 13(7):1004. https://doi.org/10.3390/cryst13071004
Chicago/Turabian StyleStoddard, Nathan, and Siddha Pimputkar. 2023. "Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices" Crystals 13, no. 7: 1004. https://doi.org/10.3390/cryst13071004