Controlling Nitrogen Do** in Graphene with Atomic Precision: Synthesis and Characterization
Abstract
:1. Introduction
2. Preparation of Nitrogen Doped Graphene
2.1. In Situ Growth Do**
2.2. Post Growth Do**
3. Characterization of Nitrogen Dopants in Doped Graphene
3.1. Dopant Concentration Characterization
3.2. Dopant Bonding Configuration Characterization
4. Dopant Control in Nitrogen Doped Graphene
4.1. Dopant Bonding Configuration
4.2. Dopant Sublattice Segregation
4.3. Dopant Spatial Segregation
5. Conclusion and Perspective
Author Contributions
Funding
Conflicts of Interest
References
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CVD Conditions | Nitrogen Content (at.%) | Ref. | |||||
---|---|---|---|---|---|---|---|
Precursors | Pressure (Pa) | Substrate | Temperature (°C) | ||||
Major Nitrogen Dopant Configuration | Graphitic-N | Methane + Ammonia | 253 | Polycrystalline Cu | 1000 | ~0.3 | [36,38] |
Methane + Ammonia | Atm | Polycrystalline Cu | 800 | 8.9 | [35] | ||
Methane + Ammonia | Unknown | Polycrystalline Cu | 1000 | N/A | [18] * | ||
Pyridine | 2.7 × 10−8 | Polycrystalline Cu | 950 | 0.18 | [16] * | ||
4,4,8,8,12,12-hexamethyl-8,12-dihydro4H-benzo[9,1]quinolizino[3,4,5,6,7-defg]acridine | <10−7 | Pt(111) | 400 | 0.4 | [43] | ||
Hexamethylenetetramine | Atm | Polycrystalline Cu | 1050 | ~0.6 | [20] | ||
Pentachloropyridine | 2000 | Polycrystalline Cu | 200–300 | 7.3–8.5 | [44] | ||
Pyridinic-N | Ethylene + Ammonia | 613 | Polycrystalline Cu | 900 | 0-16 | [25] | |
Quinoline | <10−7 | Pt(111) | 500 | 0.4 | [42] | ||
Methane + Ammonia | Atm | Polycrystalline Cu | 1000 | ~1 | [37] | ||
Camphor + Melamine | Atm | Polycrystalline Cu | 1015 | 2 | [39] | ||
Melamine | Atm | Polycrystalline Cu | 1000 | 8.9 | [26] | ||
Pyrrolic-N | Pentachloropyridine | 2000 | Polycrystalline Cu | 400–600 | 1.7–8.2 | [44] | |
Melamine | Atm | Polycrystalline Cu | 1000 | 2.7 | [26] | ||
Methane | low-pressure | Cu pretreated with NH3 plasma | 1000 | 3 | [45] | ||
Imidazole, PMMA | Atm | Polycrystalline Cu | 1000 | 3.1 | [46] | ||
Dimethylformamide | 1 | Polycrystalline Cu | 950 | 3.4 | [47] | ||
Methane + Ammonia | Atm | Polycrystalline Cu | 880 | 4.56 | [37] | ||
Nitrogen Gas + PDMS | 3100 | Polycrystalline Cu | 700 | ~5.5 | [48] |
Substrate | Post Growth Treatment | Annealing (°C) | Nitrogen Content (at.%) | Ref. | ||
---|---|---|---|---|---|---|
Major Nitrogen Dopant Configuration | Graphitic-N | Graphene/Cu | Ammonia exposure at 850 °C | N/A | 0.25 | [17] * |
Graphene/SiC(0001) | Nitrogen ion implantation | 1027 | 0.13 | [19] * | ||
Graphene/SiO2 | 10W plasma in N2 gas for 15 min | N/A | 1.7 | [33] | ||
Graphene/Cu | 7eV nitrogen beam | N/A | 2–3 | [24] | ||
Graphene/O/Ir(111) | Nitrogen plasma | 767 | 4 | [30] | ||
Free-standing graphene | Nitrogen ion implantation | N/A | 16 | [49] | ||
Graphene/Cu | Nitrogen ion implantation | N/A | Unknown | [50] | ||
Free-standing graphene | Nitrogen plasma | N/A | Unknown | [32] | ||
Pyridinic-N | Graphene/Cu | 12eV nitrogen beam | N/A | 2–3 | [24] | |
Graphene/SiC (0001) | Neutralized nitrogen plasma | 850 | 13.4 | [31] | ||
Graphene/Ni | Ammonia plasma | 800 | Unknown | [54] | ||
Graphene/Ni foam | Ammonia exposure at 1000 °C | N/A | Unknown | [34] | ||
Pyrrolic-N | Graphene/SiO2 | 7W plasma in N2 gas for 20 min | N/A | 1.8 | [33] | |
Graphene/SiO2 | Plasma exposure in ammonia at room temperature | N/A | 3 | [53] |
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Granzier-Nakajima, T.; Fujisawa, K.; Anil, V.; Terrones, M.; Yeh, Y.-T. Controlling Nitrogen Do** in Graphene with Atomic Precision: Synthesis and Characterization. Nanomaterials 2019, 9, 425. https://doi.org/10.3390/nano9030425
Granzier-Nakajima T, Fujisawa K, Anil V, Terrones M, Yeh Y-T. Controlling Nitrogen Do** in Graphene with Atomic Precision: Synthesis and Characterization. Nanomaterials. 2019; 9(3):425. https://doi.org/10.3390/nano9030425
Chicago/Turabian StyleGranzier-Nakajima, Tomotaroh, Kazunori Fujisawa, Vivek Anil, Mauricio Terrones, and Yin-Ting Yeh. 2019. "Controlling Nitrogen Do** in Graphene with Atomic Precision: Synthesis and Characterization" Nanomaterials 9, no. 3: 425. https://doi.org/10.3390/nano9030425