Nano-Structured Dilute Magnetic Semiconductors for Efficient Spintronics at Room Temperature
Abstract
:1. Introduction
2. Theory of Ferromagnetism in Oxides
3. TiO2 and Ferromagnetism
4. SnO2 and Ferromagnetism
5. Do** in ZnO and Ferromagnetism
6. Do** in In2O3 and Ferromagnetism
7. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Materials | Dopants % | Temp. | Reason for Magnetism | Value of Magnetism | Ref. |
---|---|---|---|---|---|
TiO2 | RT | Oxygen vacancies | [25] | ||
Mn doped TiO2 | 10, 15% | RT | Bound magnetic polarons | 0.035, 0.017 µB/Mn | [35] |
Anatase Ni doped TiO2 | 3, 6, 9, 12 mol.% | RT | BMP, oxygen vacancy, Ti interstitial defects | 7.21–11.33 × 10−3 µB | [36] |
Ni doped TiO2 | 2, 4, 6, 8 mol.% | RT | Oxygen vacancies | 0.61, 0.79, 0.89, 1.0 µB/Ni | [37] |
Anatase Fe doped TiO2 | 2.8, 5.4% | RT | Fe, oxygen vacancy, other electronic defects | 4.7, 4.5 µB | [38] |
Fe doped TiO2 | 1, 6, 8, 12 mol.% | RT | Oxygen vacancies, presence of impurities | 0.68, 1.3, 0.15, 0.051 µB/ Fe. | [42] |
Anatase Fe Doped TiO2 | Fe 4–8 at % | RT | Ti3+ defect, oxygen vacancies, Fe, BMP | 0.5 to 0.7 µB/Fe | [43] |
Co doped TiO2 | 3, 5, 7, 10 mol.% | RT | Charge imbalance, lattice distortion and oxygen vacancies | 0, 1.0, 1.1, 1.5 µB | [45] |
Ga Doped Rutile TiO2 | 6% | 350 K | Oxygen vacancies, ionic radii of dopant | 18 emu/cm3 | [46] |
TiO2 on rGO | Healing effect, rGO interaction with Ti3+-oxygen vacancies | [47] |
Compound | Temperature | Magnetization | % Do** | Reason Of Magnetism | Ref. |
---|---|---|---|---|---|
SnO2 | 300 K | Trap** electrons in oxygen vacancies are polarized, nanosized materials | [26] | ||
Fe doped SnO2 | 300 K | [55] | |||
Co doped SnO2 | 2–10 mass % | Oxygen vacancies | [81] | ||
Co doped SnO2 | 650 K | 7 µB per Co ion | 5% | Oxygen vacancies | [12] |
Co doped SnO2 | RT | 0.007–0.09 emu/g | 5% | oxygen vacancies, vacancy clusters and surface diffusion of Co ions | [56] |
Co and Mn codoped SnO2 | Variable temp | 1–12% Mn & 5% Co | Conc. Of Mn ions, defects | [57] | |
Co and Zn codoped SnO2 | [61] | ||||
Cr doped SnO2 | RT | 5 mol.% | Oxygen vacancies and magnetic ion impurities | [62] | |
Ni doped SnO2 | RT | 5 × 10−4 emu/g | - | Impurities and structural defects, oxygen vacancies | [63] |
Zn doped SnO2 | [60] | ||||
Ce doped SnO2 | RT | 0.16 to 0.37 emu/g | 2, 4, 6 mol.% | Ce in +3 oxidation state, Interaction of bound charge carriers in the defects with Ce ion, oxygen vacancies | [64] |
Er, F codoped SnO2 | RT | 1 mol.% | Oxygen vacancies, shallower defects | [65] | |
Er doped SnO2 | RT | 1 mol.% | Oxygen vacancies, shallower defects | [65] | |
Co and Fe codoped SnO2 | RT | - | Co = 0.5–3 mol % Fe = 5 mol % | Interfacial oxygen vacancy defects, exchange interaction between ions, surface of the nanomaterials and electronic factors, Codo** enhance FM, double exchange interaction, oxygen vacancies | [67] |
Mn doped SnO2 | Room temp. | ∼0.98 emu/g | 1% | [68] |
Compound | Temperature | % Do** | Reason for FM | Ref. |
---|---|---|---|---|
ZnO | 300 K | - | Exchange interactions between localized electron spin moment with oxygen vacancies, defects, nanomaterials | [26,84] |
Zn doped ZnO | 300 K | - | Defects, Zni, annealing in presence of magnetic field from north to south, BMP model | [87] |
Er doped ZnO | RT | 1, 3, 5, 7 at % | Oxygen vacancies, defects | [90] |
Fe doped ZnO | RT | 1, 3, 5, 7% | grain boundary barrier defect, interstitial Zn defect, oxygen vacancies | [91] |
Co doped ZnO | RT | 2, 3, 7, 10 mol.% | Oxygen vacancies, defects | [93] |
Co-doped ZnO | RT | 1, 3, 5 mol.% | Oxygen vacancies, Zn interstices | [94] |
Fe doped ZnO | RT | 2, 4, 6, 8% | RKKY exchange interaction, oxygen vacancies, defects | [92] |
Mn-doped ZnO | RT | Variable thickness of films | Higher the thickness of the film, oxygen vacancies | [95] |
Mn doped ZnO | RT | 0.2, 0.4, 0.6, 0.8 Mn/ZnO weight ratio | Synergic effect caused by oxygen vacancies and defects | [98] |
Cu doped ZnO | 4 mol.% | Oxygen vacancies | [99] |
Materials | Dopants % | Temp. | Reason for Magnetism | Value of Magnetism | Ref. |
---|---|---|---|---|---|
Pure In2O3 | - | RT | Defect induced in In2O3 formed by mechanical mining, oxygen deficient surfaces | [3,100,101] | |
Fe, Cu codoped In2O3 | 0.06 ≤ x ≤ 0.20 | RT | s-pd interexchange mechanism and overlap** of polarons | 2.52 emu/cm3 to 7.2 emu/cm3 when x goes from 0.06 to 0.20 | [104] |
Fe doped In2O3 | 2.5% | Defect like oxygen vacancy or surface passivation defects that could be created by hydrogen- annealing, mixed valence of Fe | 2–30 emu/cm3 | [106] | |
Fe doped In2O3 | 2.5–45% | Oxygen vacancies and it decreases on increasing Fe concentration, BMP | [105] | ||
Fe doped In2O3 | 5% | LT | BMP, magnetization increases on decreasing partial pressure of O2, | [107] | |
Fe doped In2O3 | 1.8, 2.5% | RT | Interfacial and local defects | [108] | |
Fe doped In2O3 | 3, 5, 7% | RT | Magnetic ions and defects formed during annealing | 11.56 memu/g to 148.64 memu/g | [109] |
Mn doped In2O3 | 10% | LT | Tetrahedrally or octahedrally coordinated Mn3+ in the intermediate spin state | 2.83 µB/Mn | [110] |
Co doped In2O3 | <0.044 and >0.052 | LT and RT | Ferromagnetism at RT observed only annealing in high vacuum due to oxygen vacancies, magnetic susceptibility of all the specimens decreases with an increase in the temperature | [112] | |
Co doped In2O3 | Oxygen vacancies | [111] | |||
N doped In2O3 | RT | N-induced acceptor defects, oxygen vacancies, | [113] | ||
Li doped at.%) In2O3 | (0.5 to 7) | Indium vacancies on substituting by Li ions | 1.64 to 4.06 µB | [114] |
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Gupta, A.; Zhang, R.; Kumar, P.; Kumar, V.; Kumar, A. Nano-Structured Dilute Magnetic Semiconductors for Efficient Spintronics at Room Temperature. Magnetochemistry 2020, 6, 15. https://doi.org/10.3390/magnetochemistry6010015
Gupta A, Zhang R, Kumar P, Kumar V, Kumar A. Nano-Structured Dilute Magnetic Semiconductors for Efficient Spintronics at Room Temperature. Magnetochemistry. 2020; 6(1):15. https://doi.org/10.3390/magnetochemistry6010015
Chicago/Turabian StyleGupta, Akanksha, Rui Zhang, Pramod Kumar, Vinod Kumar, and Anup Kumar. 2020. "Nano-Structured Dilute Magnetic Semiconductors for Efficient Spintronics at Room Temperature" Magnetochemistry 6, no. 1: 15. https://doi.org/10.3390/magnetochemistry6010015