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Molecules
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Recent Advances in Epitaxial Growth: Materials and Methods
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Recent Advances in Epitaxial Growth: Materials and Methods

A special issue of Molecules (ISSN 1420-3049). This special issue belongs to the section "Inorganic Chemistry".

Deadline for manuscript submissions: 31 October 2024 | Viewed by 2132

Special Issue Editors

Dr. Avishek Banik

E-Mail Website
Guest Editor
Department of Chemistry and Graduate Center for Materials Research, Missouri University of Science and Technology, Rolla, MO 65409-1170, USA
Interests: epitaxy; lattice mismatch; lattice strain/expansion; remote epitaxy; single crystalline film; rotational twinning; interfacial energy; crystalline order; van-der Waals epitaxy
Special Issues, Collections and Topics in MDPI journals
Dr. Eric Bohannan

E-Mail Website
Guest Editor
Materials Research Center (MRC), Missouri University of Science and Technology, Rolla, MO 65409-1170, USA
Interests: epitaxy; lattice mismatch; lattice strain/expansion; remote epitaxy; single crystalline film; rotational twinning; interfacial energy; crystalline order; van-der Waals epitaxy

Special Issue Information

Dear Colleagues,

Epitaxial growth is an emerging technique for the production of single crystals, free-standing thin films and structures. Growing epitaxial films has been a growing interest in the field of semiconductor materials research. The method can epitaxially grow a two-dimensional material on the interface of a two-dimensional material layer. Although the principle of epitaxial growth reaction is simple, it is usually difficult to realize due to its strict requirements on sample preparation and process methods.

This Special Issue focuses on the development of advanced methods for epitaxial growth. Both original research articles and comprehensive review articles are welcome. All manuscripts will follow standard journal peer-review practices, and those accepted for publication will appear in this Special Issue.

Dr. Avishek Banik
Dr. Eric Bohannan
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at mdpi.longhoe.net by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Molecules is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2700 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • epitaxy
  • lattice mismatch
  • remote epitaxy
  • single crystalline film
  • rotational twinning
  • interfacial energy
  • crystalline order
  • van-der waals epitaxy

Published Papers (3 papers)

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Research

16 pages, 12436 KiB  
Article
The Use of External Fields (Magnetic, Electric, and Strain) in Molecular Beam Epitaxy—The Method and Application Examples
by Adam Dziwoki, Bohdana Blyzniuk, Kinga Freindl, Ewa Madej, Ewa Młyńczak, Dorota Wilgocka-Ślęzak, Józef Korecki and Nika Spiridis
Molecules 2024, 29(13), 3162; https://doi.org/10.3390/molecules29133162 - 3 Jul 2024
Viewed by 211
Abstract
Molecular beam epitaxy (MBE) is a powerful tool in modern technologies, including electronic, optoelectronic, spintronic, and sensoric applications. The primary factor determining epitaxial heterostructure properties is the growth mode and the resulting atomic structure and microstructure. In this paper, we present a novel [...] Read more.
Molecular beam epitaxy (MBE) is a powerful tool in modern technologies, including electronic, optoelectronic, spintronic, and sensoric applications. The primary factor determining epitaxial heterostructure properties is the growth mode and the resulting atomic structure and microstructure. In this paper, we present a novel method for growing epitaxial layers and nanostructures with specific and optimized structural and magnetic properties by assisting the MBE process using electromagnetic and mechanical external stimuli: an electric field (EF), a magnetic field (MF), and a strain field (SF). The transmission of the external fields to the sample is realized using a system of specialized sample holders, advanced transfers, and dedicated manipulators. Examples of applications include the influence of MFs on the growth and anisotropy of epitaxial magnetite and iron films, the use of EFs for in situ resistivity measurements, the realization of in situ magneto-optic measurements, and the application of SFs to the structural modification of metal films on mica. Full article
(This article belongs to the Special Issue Recent Advances in Epitaxial Growth: Materials and Methods)
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14 pages, 31777 KiB  
Article
Heteroepitaxial Growth of InBi(001)
by Thomas J. Rehaag and Gavin R. Bell
Molecules 2024, 29(12), 2825; https://doi.org/10.3390/molecules29122825 - 13 Jun 2024
Viewed by 293
Abstract
InBi is a topological nodal line semimetal with strong spin–orbit coupling. It is epitaxially compatible with III–V semiconductors and, hence, an attractive material for topological spintronics. However, growth by molecular beam epitaxy (MBE) is challenging owing to the low melting point of InBi [...] Read more.
InBi is a topological nodal line semimetal with strong spin–orbit coupling. It is epitaxially compatible with III–V semiconductors and, hence, an attractive material for topological spintronics. However, growth by molecular beam epitaxy (MBE) is challenging owing to the low melting point of InBi and the tendency to form droplets. We investigate approaches for epitaxial growth of InBi films on InSb(001) substrates using MBE and periodic supply epitaxy (PSE). It was not possible to achieve planar, stoichiometric InBi heteroepitaxy using MBE growth over the parameter space explored. However, pseudomorphic growth of ultra-thin InBi(001) layers could be achieved by PSE on InSb(001). A remarkable change to the in-plane epitaxial orientation is observed. Full article
(This article belongs to the Special Issue Recent Advances in Epitaxial Growth: Materials and Methods)
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14 pages, 6943 KiB  
Article
The Stability Prediction and Epitaxial Growth of Boron Nitride Nanodots on Different Substrates
by Muhamad Jalu Purnomo, Yosi Febrita, Okto Dinaryanto, Wojciech Gierlotka and Ing-Song Yu
Molecules 2024, 29(6), 1313; https://doi.org/10.3390/molecules29061313 - 15 Mar 2024
Viewed by 744
Abstract
Boron nitride (BN) is a wide-bandgap material for various applications in modern nanotechnologies. In the technology of material science, computational calculations are prerequisites for experimental works, enabling precise property prediction and guidance. First-principles methods such as density functional theory (DFT) are capable of [...] Read more.
Boron nitride (BN) is a wide-bandgap material for various applications in modern nanotechnologies. In the technology of material science, computational calculations are prerequisites for experimental works, enabling precise property prediction and guidance. First-principles methods such as density functional theory (DFT) are capable of capturing the accurate physical properties of materials. However, they are limited to very small nanoparticle sizes (<2 nm in diameter) due to their computational costs. In this study, we present, for the first time, an important computational approach to DFT calculations for BN materials deposited on different substrates. In particular, we predict the total energy and cohesive energy of a variety of face-centered cubic (FCC) and hexagonal close-packed (HCP) boron nitrides on different substrates (Ni, MoS2, and Al2O3). Hexagonal boron nitride (h-BN) is the most stable phase according to our DFT calculation of cohesive energy. Moreover, an experimental validation equipped with a molecular beam epitaxy system for the epitaxial growth of h-BN nanodots on Ni and MoS2 substrates is proposed to confirm the results of the DFT calculations in this report. Full article
(This article belongs to the Special Issue Recent Advances in Epitaxial Growth: Materials and Methods)
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